کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9817764 | 1518771 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of Pt oxide thin film fabricated by plasma immersion ion implantation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
In this article, Pt films treated with oxygen plasma immersion ion implantation were analyzed with the grazing-incident X-ray diffraction and X-ray photoemission spectrometry. Due to the oxygen implantation, an amorphous layer was created under the negative substrate pulses, â2 and â5Â kV, applied to the Pt films. The amount of oxygen implanted is substantially higher for the larger substrate pulse applied. The primary Pt binding state in the implanted layer also depends on the substrate pulse; it appears to be PtO and PtO2, respectively for â2 and â5Â kV of substrate pulse. Upon annealing, appreciable amount of oxygen has escaped from the implanted Pt surface, and oxygen remaining in Pt could be detected only from the sample treated with â5Â kV pulse.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 237, Issues 1â2, August 2005, Pages 296-300
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 237, Issues 1â2, August 2005, Pages 296-300
نویسندگان
Yi-Chan Chen, Yu-Ming Sun, Shih-Ying Yu, Chang-Po Hsiung, Jon-Yiew Gan, Chwung-Shan Kou,