کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9817774 1518771 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ultra-shallow junction (USJ) sheet resistance measurements with a non-penetrating four point probe
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Ultra-shallow junction (USJ) sheet resistance measurements with a non-penetrating four point probe
چکیده انگلیسی
An accurate method to measure the four point probe (4PP) sheet resistance (RS) of ultra shallow junction (USJ) Source-Drain Extension structures is described. The method utilizes Elastic Material probes (EM-probes) to form non-penetrating contacts to the silicon surface [R.J. Hillard, P.Y. Hung, William Chism, C. Win Ye, W.H. Howland, L.C. Tan, C.E. Kalnas, Characterization and Metrology for ULSI Technology, AIP Conference proceedings 683 (2003) 802.]. The probe design is kinematic and the force is controlled to ensure elastic deformation of the probe material. The probe material is such that large direct tunneling currents can flow through the native oxide thereby forming a low impedance contact. Sheet resistance measurements on USJ implanted P+/N structures with Secondary Ion Mass Spectroscopy (SIMS) junction depths less than 15 nm have been measured. The method is demonstrated on implanted USJ structures and found to be consistent with expectations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 237, Issues 1–2, August 2005, Pages 351-355
نویسندگان
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