کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9817780 | 1518771 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of implantation energy and annealing temperature on the structural evolution of Ge+-implanted amorphous Si
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
High-resolution transmission electron microscopy in conjunction with autocorrelation function analysis have been applied to investigate the evolution of structural order in Ge+-preamorphized silicon layers. (0Â 0Â 1)Si wafers were preamorphized with 5 and 10Â keV Ge+ to a dose of 5Â ÃÂ 1015Â ions/cm2. A higher density of embedded nanocrystallites was found to be present in as-implanted amorphous Si layer for 10Â keV Ge+ than that for 5Â keV Ge+. The densities of embedded nanocrystallites in Ge+-preamorphized Si layer with 5 and 10Â keV Ge+ were found to diminish with annealing temperature first then increase. The effects of ion-implantation energy and annealing temperature on the structural evolution in Ge+-implanted amorphous Si are discussed in terms of ion-beam induced annealing and free energy change of the system. The depth dependence on the density of embedded nanocrystallites is attributed to the nonuniform distribution of Ge atoms.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 237, Issues 1â2, August 2005, Pages 384-389
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 237, Issues 1â2, August 2005, Pages 384-389
نویسندگان
J.H. He, H.H. Lin, W.W. Wu, L.J. Chen,