کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9817781 | 1518771 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Silicon field emission array as novel charge neutralization device for high current ion implanter
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We propose use of silicon field emission array as a novel charge neutralization device for ion implanter. Fundamental characteristics of the emitted electrons, i.e. energy distribution and operation in high vacuum were investigated. As a result, energy spread was narrow enough but unexpected energy peak shift was observed. To reduce the energy spread and peak shift, a FEA with less number of tips and with narrower gate diameter is necessary. The FEA could be operated about 100Â h in high vacuum.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 237, Issues 1â2, August 2005, Pages 390-394
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 237, Issues 1â2, August 2005, Pages 390-394
نویسندگان
J. Ishikawa, Y. Gotoh, K. Nakamura, T. Kojima, H. Tsuji, T. Ikejiri, S. Sakai, S. Umisedo, N. Nagai, M. Nagao, S. Kanemaru,