کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9817793 | 1518771 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Development of 1Â mA cluster ion beam source
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
High ion dose is needed to realize the nano-level smoothing and etching of hard materials using cluster ion beam. Large current is needed to increase the productivity of processing. In order to get the large current cluster ion beam, the cluster generator, ionizer and ion extraction has been studied. The intensity of neutral beams generated from various shapes of nozzles was measured and the orifice diameter of skimmer was adjusted. As a result, the 10 times stronger neutral beams could be generated and a maximum beam current of 2.4Â mA was achieved at the acceleration voltage of 45Â kV with the source gas pressure of 15,000Â Torr. The ratio of monomer ion in the beam was 58%. This result indicates that the beam current of cluster ion except monomer ion is about 1Â mA. With this beam current, 12-in. wafers can be treated with 2Â ÃÂ 1015Â ions/cm2 in about 4Â min. The process speed is high enough so that the cluster beam is available for next generation processes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 237, Issues 1â2, August 2005, Pages 455-458
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 237, Issues 1â2, August 2005, Pages 455-458
نویسندگان
T. Seki, J. Matsuo,