کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9818105 | 1518776 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Survival coefficient of Ga(5s2S1/2) sputtered from a GaAs surface
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
The effect of ambient oxygen gas on the survival probability for an excited Ga(5s) atoms to escape from a mono-crystalline GaAs (100) crystal without suffering tunneling de-excitation was investigated from measurements of photons emitted through the 5s2S1/2 â 4p2P3/2, 1/2 transition (417.20 nm, 403.3 nm lines) by Ar+ bombardment using optical spectroscopic technique. A Doppler analysis of the emitted line profile under an oxygen-free condition gave A/a = (5.2 ± 0.6) Ã 104 m/s. The transition rate for the resonant de-excitation of Ga(5s) was estimated as R â¼Â 1.8 Ã 1013 sâ1 at atom-surface distance of 2 Ã 10â10 m. The experimental result obtained was discussed in connection with the light-intensity dependence of the 417.2 nm spectral line on the distances from the target surface. The experimental result on the ambient oxygen gas effect was also discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 232, Issues 1â4, May 2005, Pages 159-164
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 232, Issues 1â4, May 2005, Pages 159-164
نویسندگان
Seiji Tsurubuchi, Tomoaki Nimura,