کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9818112 | 1518776 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Interactions of argon cluster ion beams with silicon surfaces
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
In addition, the Si surfaces, which were previously damaged at a dose of 1Â ÃÂ 1015Â ions/cm2 by the irradiation of high energy cluster ion beams such as 5Â keV ion beams, were re-irradiated at a dose of 1Â ÃÂ 1016Â ions/cm2 by low energy cluster ion beams such as 2Â keV ion beams. The RBS channeling showed that the number of displacement atoms on the damaged surface decreased. The deposited energy on the Si surface was used to improve the crystalline state of the damaged surface, which suggests that the cluster ion irradiation has the ability to anneal the solid surfaces by adjusting the acceleration voltage and the cluster size.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 232, Issues 1â4, May 2005, Pages 206-211
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 232, Issues 1â4, May 2005, Pages 206-211
نویسندگان
G.H. Takaoka, H. Shimatani, H. Noguchi, M. Kawashita,