کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9818134 | 1518776 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of Cu precipitates by ion implantation and thermal annealing for the growth of oxide nanorods
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Cu precipitates were formed on Si(1Â 0Â 0) by 200Â keV Cu ion implantation and subsequent annealing at 773Â K. The shape of the Cu precipitates evolved from a large rectangle to a small elongated pyramid with increasing annealing time, and this shape evolution seemed to result from the epitaxial formation of Cu precipitates. The average density of Cu precipitates monotonously increased and the average diameter of Cu precipitates decreased with increasing annealing time up to 1Â h. These indicate that the morphology, size and average density of Cu precipitates can be controlled by varying annealing time, and that Cu ion implantation and subsequent annealing were effective in producing a substrate dispersed with catalytic particles for oxide nanorods growth.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 232, Issues 1â4, May 2005, Pages 333-337
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 232, Issues 1â4, May 2005, Pages 333-337
نویسندگان
Akinori Takeyama, Shunya Yamamoto, Hiroshi Ito, Masahito Yoshikawa,