Radiation effects microscopy for failure analysis of microelectronic devices

In this paper a review of the latest radiation effects microscopy (REM) work at Sandia will be given. Different SEE mechanisms (Single Event Upset, Single Event Transient, etc.) and the methods to study them (Ion Beam Induced Charge (IBIC), Single Event Upset mapping, etc.) will be discussed. Several examples of using REM to study the basic effects of radiation in electronic devices and failure analysis of integrated circuits will be given.