کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9818226 | 1518777 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Reliability study of bulk and SOI SRAMs using high energy nuclear probes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
The reliability of the bulk and SOI SRAMs was investigated using high energy proton probes with energies of 300-800Â keV and operating voltages of 1.5-1.9Â V. The soft and hard errors did not occur in the SOI and bulk SRAMs with a proton probe energy of 300Â keV. The soft errors in the SOI SRAMs with a body-tie structure occurred with a proton probe energies of more than 350Â keV. On the contrary, less soft errors in bulk SRAMs occurred with proton probe energies of 350-800Â keV, but many hard errors occurred in the control circuits. The SER in the SOI SRAM depends on the generated excess carriers in the SOI body by proton probe irradiation. The soft errors in SOI SRAMs are suppressed by a higher operating voltage at and near the normal operating voltage.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 231, Issues 1â4, April 2005, Pages 482-485
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 231, Issues 1â4, April 2005, Pages 482-485
نویسندگان
Satoshi Abo, Hiroto Yamagiwa, Toshiaki Iwamatsu, Shigeto Maegawa, Yutaka Arita, Takashi Ipposhi, Atsushi Kinomura, Fujio Wakaya, Mikio Takai,