کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9818285 1518778 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Radiation damage induced by 5 keV Si+ ion implantation in strained-Si/Si0.8Ge0.2
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Radiation damage induced by 5 keV Si+ ion implantation in strained-Si/Si0.8Ge0.2
چکیده انگلیسی
The damage distributions induced by ultra low energy ion implantation (5 keV Si+) in both strained-Si/Si0.8Ge0.2 and normal Si are measured using high-resolution RBS/channeling with a depth resolution better than 1 nm. Ion implantation was performed at room temperature over the fluence range from 2 × 1013 to 1 × 1015 ions/cm2. Our HRBS results show that the radiation damage induced in the strained Si is slightly larger than that in the normal Si at fluences from 1 × 1014 to 4 × 1014 ions/cm2 while the amorphous width is almost the same in both strained and normal Si.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 230, Issues 1–4, April 2005, Pages 230-233
نویسندگان
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