Growth and ion beam study of DC sputtered indium oxide films

Transmission electron microscopy (TEM) and ion beam techniques were used to study the DC reactively sputtered In2O3 films on Si substrates. TEM studies showed that the films are single-phase and polycrystalline. Particle induced X-ray emission (PIXE) enabled trace analysis of the films. Rutherford backscattering spectrometry (RBS) investigations suggested the formation of 20 nm thick inhomogeneous interface region between In2O3 film and Si. Secondary ion mass spectrometry (SIMS) depth profiling and current-voltage measurements confirmed the presence of the interface region.