کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9818431 | 1518780 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Multiscale approach for the analysis of channeling profile measurements of ion implantation damage
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Coupled binary collision and kinetic lattice Monte Carlo simulations are used to analyze 30Â keV B channeling profile measurements of damage from 30Â keV N implants in (1Â 1Â 0)-Si. Collision cascades are generated in the binary collision approach, while dynamic annealing and post-implant annealing at room temperature are treated within the kinetic lattice Monte Carlo approach. In the binary collision simulations the atom positions of each defect and the lattice strain around the defects are considered. Strain is shown to have a weak but non-negligible effect on the channeling of 30Â keV B. Comparison of the simulation results with the B profiles measured by SIMS suggests that interstitials and vacancies are attracted by clusters of the opposite type and/or repelled by clusters of the same type.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 228, Issues 1â4, January 2005, Pages 360-363
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 228, Issues 1â4, January 2005, Pages 360-363
نویسندگان
G. Hobler, G. Otto, D. KovaÄ, L. Palmetshofer, K. Mayerhofer, K. Piplits,