Application of ion implantation for mono-Si piezoresistors manufacturing in silicon MEMS technology

Two approaches for manufacturing of p-type resistive paths in silicon by ion implantation have been compared. Namely, B+ (doping ion) implantation and F+ (amorphizing ion) combined with B+ implantation processes with further sequential 600 °C(3 h)/800 °C(1 h)/1000 °C(2 h)-1100 °C(2 h) furnace annealing have been used for fabrication of the piezoresistors, conductive paths and p-n junctions. Electrical properties of these elements have been determined.