Structural studies on ion-implanted semiconductors using X-ray synchrotron radiation: Strain evolution and growth of nanocrystals

Another important issue is the analysis of nanocrystals. Diamond-SiC heterostructures produced by ion beam synthesis are considered as a promising technique for production of novel devices for high-power applications. Synthesized by ion bombardment nanocrystals that grow in the single crystalline matrix are highly oriented. As revealed by X-ray scattering, size and shape of nanocrystals, as well as incorporated strain depend on the ion implantation parameters.