کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9821594 | 1518988 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Frequency-dependent annealing characteristics of the implant-isolated GaAs layers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
The isolation behaviour in n-type GaAs due to proton implantation is studied. Good-quality electrical isolation has been achieved by polyenergetic implantation of H+ ions with energies up to 400 keV. A conductivity dependence on the frequency has been measured for the GaAs layers modified by proton irradiation both before and after annealing in the temperature range of 100-400 °C. Such measurements allowed us to determine the mechanism of charge carrier transport in the implanted layer, as well as activation energies for hopping conductivity. The obtained results are strong evidence that some of the defects responsible for carrier trapping are related to antisite complex defects.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 78, Issues 2â4, 30 May 2005, Pages 311-317
Journal: Vacuum - Volume 78, Issues 2â4, 30 May 2005, Pages 311-317
نویسندگان
M. Kowalski, J. Partyka, P. WÄgierek, P. Å»ukowski, F.F. Komarov, A.V. Jurchenko, D. Freik,