Optimization of the formation process of dielectric microwaveguides on the basis of polymer/SiO2/Si systems using ion irradiation

Physical as well as mathematical and technological aspects of the optimization for the forming process of dielectric microwaveguides on the basis of polymer/SiO2/Si systems with the implementation of ion irradiation technology are presented. The procedure of choice of bombarded ion parameters is presented. This information allows one to simplify the development of technological aspects of stepped and gradient microwaveguides formed on the basis of a considered system.