کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9821648 | 1518988 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Radiation-induced defects in MOS structures after irradiation with high-energy Ar, Kr, Bi heavy ions
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Radiation-induced defects in MOS structures after irradiation with high-energy Ar, Kr, Bi heavy ions Radiation-induced defects in MOS structures after irradiation with high-energy Ar, Kr, Bi heavy ions](/preview/png/9821648.png)
چکیده انگلیسی
Radiation damage in the MOS (metal-oxide-semiconductor) structures irradiated with Ar, Kr and Bi heavy ions with energies from 1 to 7.5 MeV/nucl. has been studied using charge deep level transient spectroscopy (Q-DLTS) and feedback charge capacitance voltage (C-V) techniques. Four dominant well-known deep levels such as vacancy-oxygen (VO) complex, divacancy (VV2â) in the double negative charge state and composite VVâ+VSb complex were registered versus ion fluence and annealing temperature. It was shown that VO center concentration at the near-surface silicon substrate layer is determined by ion energy loss in elastic collisions and no effect of high-level electronic stopping power was detected. At the same time, the value of the positive radiation-induced defect charge in the oxide layer was decreased under Bi ions irradiation. Thermal treatment in air ambient at 250 °C restores CV characteristics of the MOS samples to that of un-irradiated state.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 78, Issues 2â4, 30 May 2005, Pages 627-630
Journal: Vacuum - Volume 78, Issues 2â4, 30 May 2005, Pages 627-630
نویسندگان
J. StanËo, V.A. Skuratov, M. ŽisËka, P. KováÄ,