Photoluminescence of Er-doped SiO2 layers containing Si nanoclusters using dual ion implantation and annealing

Er-doped SiO2 layers containing silicon nanoclusters were obtained by dual ion implantation and subsequent annealing. All the double beam implantations of Er and Si ion were sequentially and simultaneously performed at 900 and 200 keV to doses of 1.2×1015 and 8×1016/cm2, respectively. After these implantations, the samples were annealed at a temperature range of 800-1100 °C for 60 min to form Si nanoclusters in SiO2 layers. Er concentration and distribution in the matrix was confirmed by Rutherford backscattering spectrometry. Point defects induced by ion implantation were reduced and finally removed during increasing annealing temperature. Moreover, the simultaneous implantation creates more defects in the matrix than the sequential implantation. Interestingly, a photoluminescence of Er3+ ions excitation with a typical band at around 1.54 μm could be efficiently enhanced once Si nanoclusters form in SiO2 layers, which suggests an evident energy transfer process from Si nanoclusters to Er3+ ions.