کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9845033 | 1645433 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of proton fluence on point defect formation in epitaxial silicon for radiation detectors
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
High-resolution photoinduced transient spectroscopy (HRPITS) has been used to investigate defect centres in n-type epitaxial silicon after 24Â GeV/c proton irradiation with fluences of 3Ã1014 and 9Ã1014 cmâ2 followed by a long-term annealing at 80 oC. The measurements revealed nine traps with activation energies ranging from 5 to 460Â meV. In the material irradiated with the lower fluence the concentration of V2Oâ/0 complexes is found to be approximately 4 times lower than that of divacancies V2â/0. After the irradiation with the higher fluence the material defect structure is different and the concentration of V2Oâ/0 complexes is around 6 times higher compared to that of divacancies V2â/0.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 552, Issues 1â2, 21 October 2005, Pages 71-76
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 552, Issues 1â2, 21 October 2005, Pages 71-76
نویسندگان
R. KozÅowski, P. KamiÅski, E. Nossarzewska-OrÅowska, E. Fretwurst, G. Lindstroem, M. PawÅowski,