Keywords: 71.55.-من; 71.55.âI; 71.55.Jv; 68.60.âp; 68.65.âk; Silica thin film; Polysilazane; Ultra thin barriers; Spin-on dielectrics; SOD; FTIR; Photoluminescence; Structural properties; Surface defects; Dioxasilirane; Silylene;
مقالات ISI 71.55.-من (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Density functional study of TaSin (n = 1-3, 12) clusters adsorbed to graphene surface
Keywords: 71.55.-من; 73.20.Hb; 68.43.Bc; 81.05.Uw; 71.55.âI; 25.75.Dw; Adsorption; Density functional calculations; TaSin clusters; Graphene;
Electronic states of a hydrogenic impurity in a zinc-blende GaN/AlGaN quantum well
Keywords: 71.55.-من; 73.22.âf; 73.21.La ;71.55.âi; Hydrogenic donor impurity; Electronic states; Semiconductor nano-structures;
Intense laser effects on donor impurity in a cylindrical single and vertically coupled quantum dots under combined effects of hydrostatic pressure and applied electric field
Keywords: 71.55.-من; 71.55.Eq; 71.55.âi; 73.20.Hb; 78.67.Hc; Intense laser effects; Quantum wells; Hydrostatic pressure; Electric field; Impurity;
Synthesis and luminescence properties of Tb3+:NaGd(WO4)2 novel green phosphors
Keywords: 71.55.-من; 71.55.âi; 78.55.âm; 78.55.Hx; 78.66.Vs; Hydrothermal synthesis; NaGd(WO4)2; Terbium; Luminescence; Green phosphor;
Geometric effects on energy states of a hydrogenic impurity in multilayered spherical quantum dot
Keywords: 71.55.-من; 73.21.La; 71.55.âi; 71.15.Nc; Quantum dot; Impurity; Binding energy;
Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals
Keywords: 71.55.-من; 71.35.ây; 71.55.âI; 78.55.âm; GaSeTe; Exciton; Photoluminescence; Photoconductivity; Absorption; Bridgmann;
Luminescence of Pr3+ doped K2LaCl5 microcrystals encapsulated in KCl host
Keywords: 71.55.-من; 71.35.ây; 71.55.âi; 78.55.âm; 78.55.Fv; Praseodymium; Luminescence; Microcrystals;
Determination of deep trapping center parameters in as-grown Tl2Ga2S3Se layered crystals
Keywords: 71.55.-من; 71.55.âI; 77.20.Jv; 72.80.Jc; Semiconductors; Chalcogenides; Defects; Electrical properties;
On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC(112¯0)
Keywords: 71.55.-من; 61.72.Ss; 68.49.Sf; 71.55.âi; 78.60.Hk; 81.05.Hd; 81.70.Jb; 4H-SiC; Chemical vapor deposition processes-hot wall epitaxy and sublimation epitaxy; Interfacial impurities; Cathodoluminescence; Secondary ion mass spectrometry; Impurity luminescence;
Determination of trapping center parameters in Tl2In2S3Se layered single crystals by thermally stimulated current measurements
Keywords: 71.55.-من; 71.55.âI; 77.20.Jv; 72.80.Jc; Semiconductors; Chalcogenides; Defects; Electrical properties;
Inter-impurity and impurity-host magnetic correlations in semiconductors with low-density transition-metal impurities
Keywords: 71.55.-من; 75.50.Pp; 75.30.Hx; 75.40.Mg; 71.55.âi; Dilute magnetic semiconductors; (Ga,Mn)As; Anderson model; Hirsch-Fye quantum Monte Carlo algorithm;
Electronic states of on- and off-center donors in quantum rings of finite width
Keywords: 71.55.-من; 73.21.âb; 71.55.âi; 71.70.Di; Impurity and defect levels; Quantum rings; Electronic states;
Oxygen defect in silicon studied by semi-empirical calculations
Keywords: 71.55.-من; 71.55.âi; 71.55.Cn; Oxygen defects in silicon; Silicon cluster; Hartree-Fock simulation; MNDO parametrization;
Energy of the Eu2+ 5d state relative to the conduction band in compounds
Keywords: 71.55.-من; 71.55.âi; 78.55.Hx; 71.25.Tn; 5d-4f emission; Eu2+; Lanthanide level location; 5d electron localization; Charge transfer;
Shell thickness dependence of exciton trapping in colloidal core/shell nanorods
Keywords: 71.55.-من; 78.47.+p; 78.67.Bf; 71.55.âi; Nanocrystals; CdSe; Core/shell; Nanorods; Defect states;
The role of confinement and shape on the binding energy of an electron in a quantum dot
Keywords: 71.55.-من; 73.20.Dx; 71.55.âI; 71.55.Eq; Quantum dots; Cubic and cylindrical geometry; Electric field;
Spatial electric field effect in a GaAs/AlAs tetragonal quantum dot
Keywords: 71.55.-من; 73.20.Dx; 71.55.âi; 71.55.Eq; Sub-band energy; Polarization; Tetragonal dot; Spatial electric field; Electric flux;
Properties of high-k Ti1âxSixO2 gate dielectric layers prepared at room temperature
Keywords: 71.55.-من; 68.37.Hk; 71.55.âi; 72.20.âi; 77.55.+f; 77.84.Bw; 81.15.Cd; 82.80.Pv; 84.37.+q; 85.30.Tv; TiO2; SiO2; Co-sputtering; High-k dielectric;
Defect aspects in ultra-shallow GaAs sidewall tunnel junctions implemented with molecular layer epitaxy
Keywords: 71.55.-من; 71.55.âI; 85.30.Mn; 81.15.âz; A. Semiconductors; B. Epitaxial growth; D. Defects; D. Electronic structure; D. Transport properties;
Correlation effects in Cr-Zinc chalogenides
Keywords: 71.55.-من; 71.20.Nr; 71.28.+d; 71.55.âi; Self interaction; Intermediate band materials; Impurity band; Correlation; Solar cells; Spintronic; Lasers;
Spatial electric and axial magnetic fields effect in GaAs-AlAs quantum wires
Keywords: 71.55.-من; 73.20.Dx; 71.55.âi; 71.55.Eq; Quantum wire; Impurity; Polarization;
Effect of spatial electric field on the sub-band energy in a cubic GaAs/AlAs quantum dot
Keywords: 71.55.-من; 73.20.Dx; 71.55.âi; 71.55.Eq; Sub-band energy; Spatial electric field; Quantum dot;
Highly stable persistent spectral hole burning in Eu3+ ions doped oxy-fluoride glasses of 30CaF2-10Al2O3-60B2O3
Keywords: 71.55.-من; 42.70.âa; 42.70.Ln; 71.23.âk; 71.23.Cq; 71.55.âi; Oxy-fluoride glass; Hole stability; Barrier height;
The 5f16d1â5f2 luminescence spectrum of U4+ in Cs2GeF6 crystals-A quantum chemical study
Keywords: 71.55.-من; 71.55.âi; 78.55.âm; 78.20.Bh; 42.55.Rz; d-f luminescence; Actinide ions; Doped fluoride crystals; UV lasers; Tetravalent uranium;
Low-temperature TCT characterization of heavily proton irradiated p-type magnetic Czochralski silicon detectors
Keywords: 71.55.-من; 71.55.âi; Si particle detectors; Thermal donors; TCT; Cryogenic operation;
Luminescence characteristics of Pb2+ centres in undoped and Ce3+-doped Lu3Al5O12 single-crystalline films and Pb2+âCe3+ energy transfer processes
Keywords: 71.55.-من; 78.55.Hx; 78.47.+p; 71.55.âi; Luminescence; Energy transfer; Garnets; Pb2+ and Ce3+ impurities;
En route to electrically pumped broadly tunable middle infrared lasers based on transition metal doped II-VI semiconductors
Keywords: 71.55.-من; 42.55.Rz; 42.55.Px; 71.20.Be; 71.20.Nr; 71.55.âI; 71.55.Gs; 78.30.Fs; 78.55.Et; 78.60.Fi; Transition metal doped II-VI; Cr2+:ZnSe; Photo-luminescence; Electroluminescence; Photo-conductance; Lasing;
Photo-induced current transient spectroscopy studies on polycrystalline CdTe
Keywords: 71.55.-من; 29.40.Wk; 71.55.Gs; 71.55.âi; Polycrystalline CdTe; PICTS; Traps; Deep levels;
Point scatterers and resonances in low number of dimensions
Keywords: 71.55.-من; 72.10.Fk; 71.55.âi; 72.20.Dp; Point impurities; Defects eigenstates; Scattering by defects; Impurities in thin films;
The different behaviour of CiOi and CiCs defects in SiGe
Keywords: 71.55.-من; 78.55.âm; 71.55.Ak; 81.05.Uw; 61.72.ây; 71.55.âi; Defect; SiGe; Carbon; Photoluminescence; DLTS;
Effect of electron interactions on the electronic properties of random dimer systems
Keywords: 71.55.-من; 71.55.âi; 72.10.Fk; 73.40.Gk; 73.20.Jc; Electrical and electronic properties; Band structure; Conductivity; Modeling and simulation;
Ti/Al p-GaN Schottky barrier height determined by C-V measurements
Keywords: 71.55.-من; 71.55.âi; 71.55.Eq; 72.20.Jv; 73.40.Ns; 73.61.âr; 73.61.Ey; GaN; Barrier height; C-V characteristics;
The g-values of defects in hydrogenated microcrystalline silicon
Keywords: 71.55.-من; 71.55.âi; 73.61.Cw; 76.30.âv; A. Thin films; A. Microcrystalline semiconductors; C. Point defects; E. Electron paramagnetic resonance;
Light-induced creation of hydrogen-pairs in a-Si:H
Keywords: 71.55.-من; 61.43.âj; 71.23.Cq; 71.55.âi; 73.61.Cw; A. Disordered system; A. Amorphous semiconductors; D. Recombination and trapping; D. Light-induced phenomena;
Radiation enhanced diffusion of implanted platinum in silicon guided by helium co-implantation for arbitrary control of platinum profile
Keywords: 71.55.-من; 61.80.Jh; 72.20.Jv; 71.55.âi; 66.30.Jt; Platinum; Helium; Radiation defects; Diffusion; Silicon; Lifetime control;
First-principles study on crystal and electronic structures of stacking-fault tetrahedra in epitaxialized Si films
Keywords: 71.55.-من; 73.21.âb; 73.22.âf; 73.40.âc; 71.55.âi; 61.72.ây; A1. Defects; A1. Line defects; A3. Chloride vapor-phase epitaxy; B2. Semiconducting silicon;
Nucleation and growth modes of ZnO deposited on 6H-SiC substrates
Keywords: 71.55.-من; 81.05.Dz; 81.65.âb; 68.55.Jk; 71.55.âI; 68.55.Ln; Nucleation; Growth modes of ZnO; Role of biaxial strain; Interface geometry;
Novel structure of single-electron two-channel multiplexer/demultiplexer
Keywords: 71.55.-من; 71.55.âi; 71.55.Cn; 73.20.Hb; A. Quantum dots; A. Single electron; D. Demultiplexer; D. Multiplexer; D. Variational method;
Self polarization in GaAs-(Ga, Al)As quantum well wires: electric field and geometrical effects
Keywords: 71.55.-من; 68.65+g; 71.55.âi; 71.55.Eq; Shallow donors; Quantum well wires; Electric field; Self polarization;
Effect of proton fluence on point defect formation in epitaxial silicon for radiation detectors
Keywords: 71.55.-من; 71.20.Mq; 71.23.âk; 71.55.âi; 72.20.Jv; Irradiation defects; Epitaxial silicon; HRPITS;
Shallow donor impurities in different shaped double quantum wells under the hydrostatic pressure and applied electric field
Keywords: 71.55.-من; 71.55.Eq; 71.55.âi; Hydrogenic impurities; Double graded well; Double triangle well; Hydrostatic pressure;
The effect of hydrostatic pressure on the photoionization cross-section and binding energy of impurities in quantum-well wire under the electric field
Keywords: 71.55.-من; 71.55.Eq; 71.55.âi; Photoionization; Quantum-well wires; Impurity; Hydrostatic pressure;
Shallow donor impurity binding energy in the V-shaped quantum well under the crossed electric and magnetic fields
Keywords: 71.55.-من; 71.55.Eq; 71.55.âi; 73.20.Dx; Crossed electric and magnetic field; Impurity binding energy;
Thermoelectric properties of Bi-doped Mg2Si semiconductors
Keywords: 71.55.-من; 72.20.Pa; 71.55.âi; Semiconductor; Thermoelectric material; Hall effect; Mg2Si; First-principles calculation;
Spectroscopy of cubic elpasolite Cs2NaYF6 crystals singly doped with Er3+ and Tm3+ under selective VUV excitation
Keywords: 71.55.-من; 78.55.Hx; 71.55.âi; 71.70.âd; 78.47.+p; 5d-4f luminescence; Trivalent erbium and thulium; Elpasolite crystals; VUV scintillator;
Evaluation of the optical properties of epitaxial lateral overgrown gallium nitride on sapphire and the role of optically active metastable defects using cathodoluminescence and photoluminescence spectroscopy
Keywords: 71.55.-من; 71.55.Eq; 71.55.âi; 78.60.Hk; 78.55.âm; Cathodoluminescence; Photoluminescence; Metastable defects; Depth profiling; Luminescence; Optical properties; Semiconductors;
Magneto-bound polaron in CdSe spherical quantum dots: strong coupling approach
Keywords: 71.55.-من; 63.22.+m; 71.38.âk; 71.55.âi; Quantum dots; Polarons; Magnetic fields;
Electric and magnetic field effects on the binding energy of a hydrogenic donor impurity in a coaxial quantum well wire
Keywords: 71.55.-من; 73.20.Dx; 71.55.âi; 71.55.Eq; Coaxial quantum well wire; Magnetic field; Electric field; Binding energy;
Photoluminescence of Eu2+ in SrGa2S4
Keywords: 71.55.-من; Eu2+; Phosphors; 71.55.âi; 71.70.âd; 78.55.âm; Luminescence; Ternary compounds;