Determination of trapping center parameters in Tl2In2S3Se layered single crystals by thermally stimulated current measurements

As-grown Tl2In2S3Se layered single crystals were studied by thermally stimulated current measurements in the temperature range of 10-170 K with different heating rates. Experimental data were analyzed according to various methods such as curve fitting and initial rise. The analysis of thermally stimulated current spectra registered at light excitation temperature T0=10 K revealed the trap level located at 30 meV. Attempt-to-escape frequency, concentration and capture cross section of the traps were determined as 4.2 s−1, 2.4×109 cm−3 and 1.7×10−24 cm2, respectively. It was concluded that slow retrapping (monomolecular condition) occurs for the traps in Tl2In2S3Se crystals. By the analysis of thermally stimulated current data at different light excitation temperatures, the value of 39 meV/decade was obtained for traps distribution.