Optical characterization of polysilazane based silica thin films on silicon substrates

▸ Polysilazane based silica thin films (290 nm) grown on multilayer structures of different ultra-thin barriers (UTBs) on silicon substrates were studied. ▸ The oxide local structure was studied in terms of SiOSi bridges by FTIR spectroscopy. ▸ The substrate-silica interfaces and the presence of defects were studied by means of steady state and time resolved luminescence. ▸ The analysis revealed the presence of dioxasilirane, Si(O2), and silylene, Si:, defect centers in the samples grown on silicon nitride UTB.