کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9566865 | 1503707 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ti/Al p-GaN Schottky barrier height determined by C-V measurements
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Ti/Al p-GaN Schottky barrier height determined by C-V measurements Ti/Al p-GaN Schottky barrier height determined by C-V measurements](/preview/png/9566865.png)
چکیده انگلیسی
Data are presented on the rigorous method of capacitance-voltage (C-V) measurements to the barrier height of Ti/Al p-GaN Schottky junction. For a sample with Hall concentration of 5.5Â ÃÂ 1016/cm3 the upper limit of the modulation frequency leading the full response of the activated carriers is defined as 1.5Â kHz from the capacitance versus modulation frequency (C-f) plot. The activation energy of the Mg acceptors determined from the temperature-dependent C-f plot is 0.12Â eV. The barrier height estimated with this activation energy and the intercept voltage of the 1/C2-V plot drawn with the 1.5Â kHz C-V data is 1.43Â eV at 300Â K and 1.41Â eV at 500Â K. This is the most reliable barrier height ever reported. A reliable room temperature C-V doping profile is demonstrated using the 1.5Â KHz modulation, which is sensitive enough to resolve the presence of a â¼15Â nm thin highly doped (8Â ÃÂ 1018/cm3) layer formed near the surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 250, Issues 1â4, 31 August 2005, Pages 247-251
Journal: Applied Surface Science - Volume 250, Issues 1â4, 31 August 2005, Pages 247-251
نویسندگان
Jae Wook Kim, Jhang Woo Lee,