The effect of hydrostatic pressure on the photoionization cross-section and binding energy of impurities in quantum-well wire under the electric field

Using a variational approach, we have calculated the hydrostatic pressure and electric field effects on the donor-impurity related photoionization cross-section and impurity binding energy in GaAs/GaAlAs quantum well-wires. Both the results of impurity binding energy as a function of the impurity position and photoionization cross-section for a hydrogenic donor impurity placed at the center of the quantum well-wire as a function of the normalized photon energy in the quantum well-wire under the hydrostatic pressure and electric field which are applied to the z-direction for two different wire dimensions are presented.