کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9876361 | 1533549 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dâ, Oâ and ODâ desorption induced by low-energy (0-20Â eV) electron impact on amorphous D2O films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
تشعشع
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We report measurements of low-energy electron stimulated desorption of Dâ, Oâ and ODâ anions from multilayer amorphous D2O films physisorbed on a Pt substrate. The 0-20Â eV incident energy dependence (i.e., the yield function) of the desorbed Dâ yield reveals the presence of a strong peak located at 7.2Â eV with a shoulder near 9Â eV, which are due to dissociation of the transient states 2B1 and 2A1 of D2O, respectively. The Oâ and ODâ yield functions each exhibit a single broad structure between 5 and 12Â eV which also result from dissociative electron attachment (DEA). Due to the weakness of the Oâ and ODâ signals, three possible processes involving DEA must be considered to explain their yield functions, i.e., direct DEA, reactive scattering and DEA to a new product in the film synthesized by the electron beam. It is concluded that at large electron doses (>7.5Ã1014Â electrons/cm2), these broad peaks arise from DEA to a new product, whereas at lower dose the possibility of direct DEA (i.e., eâ+D2OâD2OââOâ+D2 and ODâ+D) cannot be entirely discounted. Above 15Â eV, all anion yield functions exhibit a monotonic rise due to direct dipolar dissociation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Radiation Physics and Chemistry - Volume 72, Issues 2â3, February 2005, Pages 193-199
Journal: Radiation Physics and Chemistry - Volume 72, Issues 2â3, February 2005, Pages 193-199
نویسندگان
Xiaoning Pan, Hassan Abdoul-Carime, Pierre Cloutier, Andrew D. Bass, Léon Sanche,