| کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن | 
|---|---|---|---|---|
| 9921517 | 1559226 | 2005 | 8 صفحه PDF | دانلود رایگان | 
عنوان انگلیسی مقاله ISI
												Characterization of voltage-dependent gating of P2X2 receptor/channel
												
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																																												کلمات کلیدی
												
											موضوعات مرتبط
												
													علوم زیستی و بیوفناوری
													علم عصب شناسی
													علوم اعصاب سلولی و مولکولی
												
											پیش نمایش صفحه اول مقاله
												 
												چکیده انگلیسی
												The role of a voltage-dependent gate of recombinant P2X2 receptor/channel was investigated in Xenopus oocytes. When a voltage step to â110 mV was applied from a holding potential of â50 mV, a gradual increase was observed in current evoked by 30 μM ATP. Contribution of this voltage-dependent component to total ATP-evoked current was greater when the current was evoked by lower concentrations of ATP. The voltage-dependent gate closed upon depolarization, and half the gates were closed at â80 mV. On the other hand, a potential at which half the gates opened was about â30 mV or more positive, which was determined using a series of hyperpolarization steps. The results of the present study suggest that the voltage-dependent gate behavior of P2X2 receptor is not due to simple activation and deactivation of a single gate, but rather due to transition from a low to a high ATP affinity state.
											ناشر
												Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: European Journal of Pharmacology - Volume 508, Issues 1â3, 31 January 2005, Pages 23-30
											Journal: European Journal of Pharmacology - Volume 508, Issues 1â3, 31 January 2005, Pages 23-30
نویسندگان
												Ken Nakazawa, Yasuo Ohno,