Keywords: 51.50 + V; 84.71.Ba; 44.27.+g; 51.50.+v; 28.52.Nh; 72.80.Sk; 77.22.Jp; Superconducting magnet; Reliability; Fusion facility; Forced cooling; Electric insulation;
مقالات ISI 51.50 + V (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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Synthesis and characterization of V3O7⋅⋅H2O nanobelts
Keywords: 51.50 + V; 61.82.Rx; 68.37.Hk; 68.37.Lp; 65.80.+n; 51.60.+a; 51.50.+v; 61.05.cpA. Nanostructures; B. Chemical synthesis; C. Scanning and transmission electron microscopy
Analytic continuation for the generalized Bohm criterion in a two-ion-species plasma
Keywords: 51.50 + V; 52.40.Kh; 51.50.+v; 52.27.Cm; 52.35.Fp; The generalized Bohm criterion; Exact analytical solution; The dispersion relation of ion acoustic wave;
The two-temperature plasma model of a fireball. The calculated parameters
Keywords: 51.50 + V; 51.50.+v; 52.25.-b; 92.60.Qx; Fireball; Nonideal plasma; Surface tension; Contraction; Dusty plasma;
Investigations of structural, dielectric and optical properties on silicon ion irradiated glycine monophosphate single crystals
Keywords: 51.50 + V; 61.50.−f; 36.40.Vz; 51.50.+v; 68.37.HkSingle crystals; Optical properties of clusters; Electrical properties; Scanning electron microscopy
Numerical study and comparisons of gas tungsten arc properties between argon and nitrogen
Keywords: 51.50 + V; 51.50.+V; Numerical simulation; Arc plasma; Nitrogen; Argon;
Growth and electrical properties of Ce-doped Bi2Ti2O7 thin films by chemical solution deposition
Keywords: 51.50 + V; 81.20.n; 51.50.+v; X-ray diffraction; CSD; Electrical properties; Dielectric constant; Dielectric loss;
Transport coefficients for positron swarms in nitrogen
Keywords: 51.50 + V; 51.50.+v; 34.80.Uv; 34.80.Lx; 78.70.BjPositrons; Drift velocity; Mobility; Nitrogen; Transport
Material dependent dielectric breakdown model
Keywords: 51.50 + V; 34.80.Dp; 51.50.+v; 77.22.JpDielectric; Breakdown; Ionization coefficient
Energy of the quasi-free electron in argon, krypton and xenon
Keywords: 51.50 + V; 72.40.+w; 51.50.+v; 31.70.-f; Supercritical fluids; Quasi-free electron; Effective range theory;
Theoretical investigation of dielectric corona pre-ionization TEA nitrogen laser based on transmission line method
Keywords: 51.50 + V; 03.75.Pp; 51.50.+v; 52.77.FvTEA nitrogen laser; Dielectric corona pre-ionization; Transmission line method
Beam experiments on the Pulse Line Ion Accelerator
Keywords: 51.50 + V; 29.17.+w; 41.75.Ak; 29.27.-a; 51.50.+v; Accelerator; Ion; Beam; Longitudinal compression; Breakdown; Multipactor;
Influence of ambient gas ionization on the deposition of clusters formed in an ablation plume
Keywords: 51.50 + V; 51.50.+v; 36.40.Sx; 81.16.Mk; 81.07.Bc; Pulsed laser deposition; Plume dynamics; Ionization; Cluster-assembled films; Carbon;
Optical and electrical properties of different oriented CVD diamond films
Keywords: 51.50 + V; 81.05.Uw; 81.15.Gh; 78.20.Ci; 51.50.+v; CVD diamond film; Oriented growth; Optical properties; Electrical properties;
Determination of concentration of excited oxygen atoms on the basis of ion mobility in atmospheric plasma
Keywords: 51.50 + V; 51.50.+v; 82.80.Rt; 34.70.+e; Ion mobility; Mass spectrometry; Charge exchange process;
Conduction and trapping of electric charges in an anisotropic material after irradiation with an electron beam: Application to TiO2 single-crystal
Keywords: 51.50 + V; 51.50.+v; 52.25.Fi; 52.25.MqCharge effects; Electron beam irradiated area; Anisotropic material; Trapping; TiO2
Sb excimer-laser doping in ZnO films prepared by oxidation of sulfide on Si
Keywords: 51.50 + V; 68.55.-a; 51.50.+v; 78.55.-m; 77.84.Bw; ZnO; Conduction control; Thin film; Epitaxial growth; Laser doping;
Enhancement of the molecular nitrogen dissociation and ionization levels by argon mixture in flue nitrogen plasma
Keywords: 51.50 + V; 51.50.+v; 51.70.+f; 52.25.Jm; 52.75.Hn; Nitrogen dissociation; Nitrogen ionization; Argon mixture; Flue plasma;
Characterization of BF2+ implanted monitor for rapid thermal processor temperature calibration
Keywords: 51.50 + V; 61.72.ây; 85.40.Ry; 66.10.Cb; 85.40.âe; 51.50.+v; Silicon; Ion implantation; Diffusion; Microelectronics; Electrical properties;
Electrical properties of [1Â 0Â 0]-oriented CVD diamond film
Keywords: 51.50 + V; 51.50.+v; 81.05.Uw; 81.15.Gh; Diamond films; HFCVD; [1Â 0Â 0]-oriented growth; Electrical properties;
Effects of argon plasma treating on surface morphology and gas ionization property of carbon nanotubes
Keywords: 51.50 + V; 81.07.De; 79.70.+q; 51.50.+v; 52.77.Bn; Carbon nanotube; Surface treatment; Gas ionization; Argon plasma process;
Improvement of the electrical properties of PECVD silicon oxide using high-density and low-ion-energy plasma post-treatment
Keywords: 51.50 + V; C185; E12081.15.Gh; 52.75.Rx; 81.05.Je; 51.50.+v
Efficient self-assembly of transition metal oxide nanoclusters on silicon substrates
Keywords: 51.50 + V; 82.70.Dd; 07.79.Lh; 85.40.Ux; 51.50.+v; Nanoparticles; Self-assembly; Transition metal oxide; Electrostatic interaction;
Mobility of thorium ions in liquid xenon
Keywords: 51.50 + V; 61.25.Bi; 51.50.+v; 66.10.Ed; Liquid xenon calorimeters; Ion transport; Low background physics; Experimental neutrino physics;
Ferroelectric and leakage current characteristics of (Pb0.72La0.28)Ti0.93O3 thin films prepared by a sol-gel process
Keywords: 51.50 + V; 77.80.âs; 77.22.âd; 51.50.+v; 68.37.âd; PLT thin films; Ferroelectric properties; Leakage current;
One-dimensional time-dependent capacitor model of breakdown in DBDs at atmospheric pressure
Keywords: 51.50 + V; 02.70.-c; 52.25.-b; 51.50.+v; 52.65.-y; 52.80.-s; Plasma simulation; Capacitor model; Propagator method; Fluid model; Energy-conserving scheme; Plasma breakdown;
Magnetic field effects on electrical parameters of rf excited CO2 lasers
Keywords: 51.50 + V; 42.55.Lt; 52.55.Dy; 51.50.+v; CO2 laser; Magnetic field; Radio frequency;
Development of a double-phase Xenon cell using micromegas charge readout for applications in dark matter physics
Keywords: 51.50 + V; 52.80.Dy; 51.50.+V; Charge readout; Micromegas; Xenon; Dark matter; Micro pattern;