کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9567356 | 1503713 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Sb excimer-laser doping in ZnO films prepared by oxidation of sulfide on Si
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Sb excimer-laser doping in ZnO films prepared by oxidation of sulfide on Si Sb excimer-laser doping in ZnO films prepared by oxidation of sulfide on Si](/preview/png/9567356.png)
چکیده انگلیسی
ZnO thin films were formed by oxidation of ZnS films on Si substrates. Sb doping of ZnO films was tried by laser irradiation of ZnO deposited with Sb. Although p-type ZnO:Sb film was not obtained, it was observed that the laser irradiation increased the near-ultraviolet (NUV) emission intensity, whereas the visible emission of oxygen vacancies decreased. Moreover, the resistance of the laser-irradiated ZnO:Sb films was higher than that of films without irradiation. These results show that Sb compensates the oxygen vacancy; as a result, the electrons are neutralized by holes generated by the dopant (Sb).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 244, Issues 1â4, 15 May 2005, Pages 369-372
Journal: Applied Surface Science - Volume 244, Issues 1â4, 15 May 2005, Pages 369-372
نویسندگان
K. Ohara, T. Seino, A. Nakamura, T. Aoki, H. Kominami, Y. Nakanishi, Y. Hatanaka,