کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9817790 | 1518771 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of BF2+ implanted monitor for rapid thermal processor temperature calibration
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The sheet resistance of BF2+ implanted diffused layers in (1Â 1Â 1) silicon wafers is very sensitive to temperature and relatively insensitive to implant dose variation. These properties have been exploited to develop a temperature calibration technique that is well suited for use with rapid thermal processor and single wafer epitaxial reactors. Characterization results of BF2+ implanted layers can be used to create a temperature monitor optimized for specific applications. This simple technique can be established in most fabrication facilities with minimal capital expense and low variable costs. Application examples are also discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 237, Issues 1â2, August 2005, Pages 438-442
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 237, Issues 1â2, August 2005, Pages 438-442
نویسندگان
Vladimir F. Drobny, Derek Robinson,