Keywords: A1 تعیین مشخصات; B1. Diamond; A1. Defects; A1. Characterisation; A2. Growth from high temperature solution; A1. Recrystallisation; A1. Stresses;
مقالات ISI A1 تعیین مشخصات (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging
Keywords: A1 تعیین مشخصات; A1. Characterisation; A1. Photoluminescence imaging; A1. Metal precipitates; A1. Point defects; A1. Doping; B2. Semiconducting silicon;
Flux growth and grey colouration characteristics in KTiOPO4:Ln (Ln= Yb, Nd, Ho, Er, La)
Keywords: A1 تعیین مشخصات; A1. Characterisation; A1. X-ray diffraction; A2. Growth from high temperature solutions; B1. Titanium compounds; B2. Nonlinear optical materials
Growth of isotopically enriched ZnO nanorods of excellent optical quality
Keywords: A1 تعیین مشخصات; A1. Characterisation; A1. Nanostructures; A2. Growth from vapour; B1. Zinc compounds; B2. Semiconducting II-VI materials;
Growth and characterisation of a new polymorph of strontium D, l-malate: A metal organic frame work
Keywords: A1 تعیین مشخصات; A1. Crystal structure; A1. Characterisation; A1. X-ray diffraction; A2. Single crystal growth; B1. Polymer
Synthesis and characterisation of Copper Zinc Tin Sulphide (CZTS) compound for absorber material in solar-cells
Keywords: A1 تعیین مشخصات; A1. Crystal structure; A1. Characterisation; B1. Cu2ZnSnS4; B2. Photovoltaic absorber
The growth of In0.5Ga0.5N and InN layers on (1 1 1)Si using nanorod intermediate arrays
Keywords: A1 تعیین مشخصات; A1. Nanostructures; A1. Characterisation; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III–V materials; B3. Solar cells
2 dimensional electron gas uniformity of GaN HFET layers on SiC
Keywords: A1 تعیین مشخصات; A1. Characterisation; A3. Metal organic vapour phase epitaxy; B1. Nitrides; B2. Semiconducting III-V Materials; B3. Field effect transistors;
Deposition of nanometric double layers Ru/Au, Ru/Pd, and Pd/Au onto CdZnTe by the electroless method
Keywords: A1 تعیین مشخصات; A1. Characterisation; A1. Nanostructures; A1. Interfaces; A1. Surface processes; B2. Semiconducting II–VI materials
Investigating vaterite phase stabilisation by a tetrazole molecule during calcium carbonate crystallisation
Keywords: A1 تعیین مشخصات; A1. Adsorption; A1. Biocrystallization; A1. Characterisation; A1. Impurities; A2. Growth from solutions; B1. Calcium compounds
Growth and characterisation of a novel polymer of manganese(II) nicotinate single crystal
Keywords: A1 تعیین مشخصات; A1. Crystal structure; A1. Characterisation; A2. Single crystal growth; B1. Polymers; B1. Metals
Investigating the chemical and morphological evolution of GaAs capped InAs/InP quantum dots emitting at 1.5 μm using aberration-corrected scanning transmission electron microscopy
Keywords: A1 تعیین مشخصات; A1. Characterisation; A1. Nanostructures; A1. Scanning transmission electron microscopy; A3. Metalorganic vapour-phase epitaxy; A3. Quantum dots; B2. Semiconducting III/V materials
Bimodal optical characteristics of lateral InGaAs quantum dot molecules
Keywords: A1 تعیین مشخصات; A1. Nanostructures; A1. Characterisation; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials;
Growth and characterization of novel ferroelectric urea-succinic acid single crystals
Keywords: A1 تعیین مشخصات; 81.10.Dn; 78.20.Ci; 77.84.-s; A1. Characterisation; A2. Growth from solutions; B2. Dielectric materials; B2. Ferroelectric materials;
Codoping in ZnO using GaN by pulsed laser deposition
Keywords: A1 تعیین مشخصات; 71.55.Gs, 73.61.Ga, 78.66.Hf; A1. Codoping; A1. Defects; A1. Characterisation; A3. Pulsed laser deposition; B1. Gallium nitride; B1. Zinc oxide;
Development and applications of an inexpensive and modular medium-throughput microcrystalliser for the preparation and characterisation of solid phases
Keywords: A1 تعیین مشخصات; A1. Characterisation; A1. Light tomography; A1. Medium throughput; A1. Nucleation; A2. Growth from solutions; B1. Organic compounds;
Structural studies of a combined InAlAs-InGaAs capping layer on 1.3-μm Inas/GaAs quantum dots
Keywords: A1 تعیین مشخصات; 68.35.Dv; 68.37.Lp; 68.55.Ac; 68.65.Hb; 81.05.Ea; 81.07.Ta; 81.15.Hi; A1. Characterisation; A1. Nanostructures; A1. Segregation; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials;
Structural characterisation of zinc-blende Ga1âxMnxN epilayers grown by MBE as a function of Ga flux
Keywords: A1 تعیین مشخصات; A1. Characterisation; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;