کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829309 | 1524488 | 2005 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural characterisation of zinc-blende Ga1âxMnxN epilayers grown by MBE as a function of Ga flux
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Zinc-blende Ga1âxMnxN epilayers grown by plasma-assisted molecular beam epitaxy as a function of Ga flux are assessed using a variety of structural characterisation techniques. The Ga:N ratio was found to have a dominant impact on the zinc-blende Ga1âxMnxN epilayer growth rate and resultant composition, morphology and microstructure. A maximum growth rate and an improved microstructure are associated with growth under slightly Ga-rich conditions. A reduced growth rate and enhanced Mn incorporation are associated with growth under slightly N-rich conditions. α-MnAs inclusions and voids extending into the GaAs buffer layer were observed in all cases, however they are considered not to affect the layer electrical and magnetic properties.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 284, Issues 3â4, 1 November 2005, Pages 324-334
Journal: Journal of Crystal Growth - Volume 284, Issues 3â4, 1 November 2005, Pages 324-334
نویسندگان
Y. Han, M.W. Fay, P.D. Brown, S.V. Novikov, K.W. Edmonds, B.L. Gallagher, R.P. Campion, C.R. Staddon, C.T. Foxon,