Keywords: A1 رابط; A1. Computer simulation; A1. Growth models; A1. Interface; B1. Polycrystalline growth;
مقالات ISI A1 رابط (ترجمه نشده)
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Keywords: A1 رابط; A2. Czochralski method; A1. Crystal morphology; A1. Heat transfer; A1. Radiation; A1. Interface; B1. Oxides and silicon;
Keywords: A1 رابط; A1. Interface; A1. Nanostructures; A1. Nucleation; A3. Liquid phase epitaxy
Keywords: A1 رابط; A1. Assembly; A1. Dynamics; A1. Interface; A1. Nanorod; A1. Whisker; B1. Copper oxide
Heteroepitaxial growth and interface structure of pyrochlore (Ca,Ti)2(Nb,Ti)2O7 thin films on (1â¯1â¯0) NdGaO3 substrates
Keywords: A1 رابط; A3. Thin films; A1. Interface; B1. Pyrochlore structure; A1. Advanced electron microscopy;
CeO2 nanocrystals and solid-phase heteroepitaxy of CeAlO3 interlayer on Al2O3(0Â 0Â 0Â 1) substrate
Keywords: A1 رابط; A1. Interface; A2. Hydrothermal crystal growth; A3. Solid phase epitaxy; B1. Nanomaterials; B1. Rare earth compounds; B1. Sapphire;
Effects of tilt angle of mirror–lamp system on shape of solid–liquid interface of silicon melt during floating zone growth using infrared convergent heating
Keywords: A1 رابط; A1. Heat transfer; A1. Interface; A2. Floating zone technique; A2. Growth from melt; B2. Semiconducting silicon
Interface effect on structural and optical properties of type II InAs/GaSb superlattices
Keywords: A1 رابط; A1. Interface; A1. Low dimensional structures; A1. Stresses; A3. Molecular beam epitaxy; B1. Antimonides
Solidification microstructure of Bridgman-grown Si–TaSi2 eutectic in situ composite
Keywords: A1 رابط; A1. Directional solidification; A1. Eutectic; A1. Interface; A2. Bridgman technique; B1. Si–TaSi2
To investigate interface shape and thermal stress during sapphire single crystal growth by the Cz method
Keywords: A1 رابط; A1. Computer simulation; A1. Interface; A1. Stresses; A2. Czochralski method; B1. Sapphire
Crystal growth of rutile by tilting-mirror-type floating zone method
Keywords: A1 رابط; A1. Defects; A1. Etching; A1. Interface; A2. Floating zone technique; A2. Growth from melt; B1. Oxide
Bubbles engulfment and entrapment by cellular and dendritic interfaces during directional solidification
Keywords: A1 رابط; A1. Directional solidification; A1. Interface; A2. Growth from melt
Foreign particle behavior at the growth interface of tetrahydrofuran clathrate hydrates
Keywords: A1 رابط; A1. Directional solidification; A1. Interface; A2. Growth from melt; B1. Clathrate hydrates; B1. Tetrahydrofuran;
Changes in efficiency of a solar cell according to various surface-etching shapes of silicon substrate
Keywords: A1 رابط; A1. Etching; A1. Interface; A3. Chemical vapor deposition processes; B2. Semiconducting silicon; B3. Solar cells
Effect of currents on the microstructure of directionally solidified Al–4.5 wt% Cu alloy
Keywords: A1 رابط; A1. Directional solidification; A1. Interface; A1. Morphological stability; B1. Alloys
Microstructure of SiC fiber fabricated by two-stage chemical vapor deposition on tungsten filament
Keywords: A1 رابط; A1. Crystal structure; A1. Interface; A1. Defects; A3. Chemical vapor deposition processes; B1. Inorganic compounds;
A comparative study on migration of a planar interface during solidification of non-dilute alloys
Keywords: A1 رابط; A1. Interface; A1. Kinetics; A1. Solidification; A1. Thermodynamics; B1. Non-dilute alloy;
Micro-emulsion synthesis of blue-luminescent silicon nanoparticles stabilized with alkoxy monolayers
Keywords: A1 رابط; A1. Interface; A1. Low-dimensional structures; A1. Nucleation; A1. Surfaces; A2. Growth from solutions; B1. Nanomaterials
Formation of metastable MgO structures on type-III oxide surfaces: Effect of periodic out-of-plane electric dipole moment of substrates
Keywords: A1 رابط; 68.47.Gh; 68.35.Rh; 61.72.Nn; 68.35.Ct; A1. Interface; A1. Metastable structure; A1. Phase equilibrium; A1. Planar defects; A3. Molecular beam epitaxy; B1. MgO;
Characterization of MOVPE-grown p-InGaAs/n-InP interfaces
Keywords: A1 رابط; 73.20.At; 73.40.Kp; 73.61.EyA1. Characterization; A1. Interface; A3. Metalorganic vapor phase epitaxy; B3. Bipolar transistors
Influence of amorphous buffer layers on the crystallinity of sputter-deposited undoped ZnO films
Keywords: A1 رابط; 68.55.Ac; 68.55.Jk; 61.10.Nz; 82.80.PvA1. Nucleation; A1. Interface; A1. X-ray diffraction; A1. Growth models; B1. ZnO; B1. Glasses
Thermodynamics and kinetic theory of nucleation and the evolution of liquid precipitates in gallium arsenide wafer
Keywords: A1 رابط; 8.60.Nh; 82.20.Db; 82.20.--w; 61.72.Bb; 61.72.Qq; 64.70.DvA1. Diffusion; A1. Interface; A1. Nucleation; A1. Phase diagrams; A1. Phase transition; A1. Stresses; A1. Volume defects; B2. Semiconducting gallium arsenide
Kinetics of the exchanges at the solid–liquid interface during the dissolution process of gallium orthophosphate
Keywords: A1 رابط; 77.84.Dy; 81.10.Dn; 81.65.Cf; 82.20.Pm; 82.60.Cx; 64.60.QbA1. Dissolution; A1. Etching; A1. Interface; A1. Kinetics; A1. Nucleation; A1. Solubility; A1. Solvents; A2. Hydrothermal crystal growth; B1. Phosphates; B1. Quartz; B2. Piezoelectric materials; B3
Novel gas-switching sequence using group-III pre-flow (GIIIP) method for fabrication of InGaP on GaAs hetero-interface by MOVPE
Keywords: A1 رابط; 81.05.Ea; 82.33.Ya; 68.47.Fg; A1. Interface; A1. Surface processes; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III-V materials; B2. Semiconducting gallium arsenide; B2. Semiconducting indium gallium phosphide;
In situ characterization of lattice relaxation of the BaTiO3/LaNiO3 superlattices epitaxially grown on SrTiO3 substrates
Keywords: A1 رابط; 68.10.Nz; 68.10.Kw 68.55.Jk; A1. In situ X-ray diffraction and reflectivity; A1. Interface; A1. Superlattices; A1. Surface structure;
Influence of in situ HCl gas cleaning on n/p-type GaAs and AlGaAs regrown interfaces in MOCVD
Keywords: A1 رابط; 71.55.Eg; 73.61.Ey; 81.65.Cf; A1. Etching; A1. Interface; A1. Surface; A3. Metal organic chemical vapor deposition; B1. Aluminum gallium arsenide; B1. Gallium arsenide; B1. Hydrogen chloride;