کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1792577 | 1023650 | 2010 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Microstructure of SiC fiber fabricated by two-stage chemical vapor deposition on tungsten filament
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
Continuous silicon carbide (SiC) fiber with a diameter of about 100 μm was fabricated by two-stage chemical vapor deposition on tungsten filament. Microstructure of the fiber was investigated by means of scanning electron microscopy, X-ray diffraction, transmission electron microscopy and Raman spectrometry. The results showed that the fiber consists of tungsten core, a W/SiC interfacial reaction zone with the reaction products of W5Si3 and WC, and a predominant β-SiC layer. The W/SiC interface can be described as W/W5Si3/WC/SiC. The SiC originates at the surface of the WC with a buffer layer, in which β-SiC crystallites nucleate and grow with their preferred (1 1 1) orientation, exhibiting strong ã1 1 1ã fiber texture. Raman spectra revealed that the SiC in the fiber is stoichiometric, which is composed of β-SiC and amorphous SiC. Furthermore, the formation mechanism of W/SiC interfacial reaction zone and structural evolution of SiC are discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 313, Issue 1, 15 December 2010, Pages 56-61
Journal: Journal of Crystal Growth - Volume 313, Issue 1, 15 December 2010, Pages 56-61
نویسندگان
Rong-Jun Zhang, Yan-Qing Yang, Wen-Tao Shen, Chen Wang, Xian Luo,