
Study of crystal damage by ion implantation using micro RBS/channeling
Keywords: آمورفیسازی; 07.79.−v; 41.75.Ak; 61.72.Dd; 61.80.Az; 61.80.Jh; 61.82.Fk; 61.85.+p; 82.80.YcNuclear microprobe; Micro RBS/channeling; Experimental setup; Ion implantation; Si ions; Silicon; Ion current density; Radiation damage; Amorphisation; Critical temperature