Structure and magnetic properties of Si:Mn annealed under enhanced hydrostatic pressure

The effect of processing at 610 K under hydrostatic pressure, HP, up to 1.1 GPa on the structure and magnetic properties of (0 0 1) oriented Czochralski and Floating zone grown silicon (Cz-Si and Fz-Si) implanted with Mn+ at 160 keV to a dose 1 × 1016 cm−2 has been investigated. Temperature, TS, of Si at implantation was kept at 340 K for Cz-Si and at 610 K for Fz-Si. Structure of Si:Mn is distinctly dependent on TS and HP treatment parameters. The structure of Cz-Si:Mn implanted at 340 K and subsequently processed under 105 Pa/1.1 GPa for 1 h remains disordered. The Fz-Mn:Si samples processed under 105 Pa as well as under HP exhibit distinctly improved structure. A significant difference in the temperature-dependent magnetization between Cz-Si:Mn and Fz-Si:Mn samples is observed. For Fz-Si:Mn processed at 610 K under 105 Pa the Curie temperature exceeds 300 K. The influence of treatment conditions on the structure and magnetic properties of Si:Mn is discussed.