Effects of vicinal angles from (0 0 1) surface on the Boron-doping features of high-quality homoepitaxial diamond films grown by the high-power microwave plasma chemical-vapor-deposition method
Keywords: B1 الماس; 81.05Uw; 81.15Gh; 78.60Hk; 71.35.−yA1. Doping; A3. Chemical vapor deposition processes; B1. Diamond; B2. Semiconducting materials