کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1797352 1023780 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Valence electron structure analysis of epitaxial growth of diamond (1 0 0) film on Si and c-BN substrate
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Valence electron structure analysis of epitaxial growth of diamond (1 0 0) film on Si and c-BN substrate
چکیده انگلیسی
Based on the Pauling's nature of chemical bond, the valence electron structures of diamond, Si and c-BN crystals have been constructed and the relative electron density difference (REDD) between the diamond (1 0 0) plane and 22 planes in Si and c-BN substrate, respectively, have been calculated. The experimental results, that the diamond (1 0 0) film can exclusively grow directly on the (1 0 0) oriented c-BN substrate, have been explained satisfactorily from minimization of the electron density difference across the interface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 290, Issue 1, 15 April 2006, Pages 229-234
نویسندگان
, , ,