Keywords: B1 Nanowires; A1. Micropatterning; A1. Luminescence; A2. Growth from solutions; B1. Barium compounds; B1. Nanowires;
مقالات ISI B1 Nanowires (ترجمه نشده)
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Keywords: B1 Nanowires; A1. Nanostructures; A3. Afterglow oxidation; A3. Micro-plasma; B1. Copper oxide; B1. Nanowalls; B1. Nanowires
Capillary stability of vapor-liquid-solid crystallization processes and their comparison to Czochralski and Stepanov growth methods
Keywords: B1 Nanowires; A1. Nanostructures; A1. Growth models; B1. Nanowires; B1. Nanomaterials; B2. Semiconducting materials; B2. Semiconducting silicon; B2. Semiconducting III-V materials;
Preparation and growth mechanism of β-SiC nanowires by using a simplified thermal evaporation method
Keywords: B1 Nanowires; A1. Chemical vapor deposition; A1. Vapor–solid growth mechanism; A3. SiC; B1. Nanowires
GaAs nanowires grown by Ga-assisted chemical beam epitaxy: Substrate preparation and growth kinetics
Keywords: B1 Nanowires; A1. Crystal structure; A3. Chemical beam epitaxy; A3. Vapor–liquid–solid; B1. Nanowires; B2. Semiconducting gallium arsenide
Growth of II-VI ZnSe/CdSe nanowires for quantum dot luminescence
Keywords: B1 Nanowires; A1. Growth Models; A1. Transmission electron microscopy; A3. Molecular beam epitaxy; B1. Nanowires; B1. Quantum dots; B2. Semiconducting II-VI material;
Single-crystalline hafnium carbide nanowire growth below the eutectic temperature by CVD
Keywords: B1 Nanowires; A1. TEM; A3. Chemical vapor deposition; B1. Eutectic temperature; B1. Nanowires; B1. HfC
Pure zincblende GaAs nanowires grown by Ga-assisted chemical beam epitaxy
Keywords: B1 Nanowires; A1. Crystal structure; A3. Chemical beam epitaxy; A3. Vapor–liquid–solid; B1. Nanowires; B2. Semiconducting gallium arsenide
Insertion of CdSe quantum dots in ZnSe nanowires: MBE growth and microstructure analysis
Keywords: B1 Nanowires; B1. Nanowires; B2. Semiconducting II-VI material; A3. Molecular beam epitaxy; B1. Quantum dots; A1. Transmission electron microscopy; A1. Photoluminescence;
Colloidal synthesis and characterization of CdSe/CdTe core/shell nanowire heterostructures
Keywords: B1 Nanowires; A1. Colloidal synthesis; B1. CdSe; B1. CdTe; B1. Core/shell; B1. Nanowires; B2. Heterostructure
Chemical beam epitaxy of highly ordered network of tilted InP nanowires on silicon
Keywords: B1 Nanowires; 81.15.Hi; 62.23.Hj; 81.30.ât; A1. Eutectics; A3. Chemical beam epitaxy; B1. Nanowires;
The effect of growth rate enhancement on the magnetic properties and microstructures of ac electrodeposited Co nanowires using non-symmetric reductive/oxidative voltage
Keywords: B1 Nanowires; 62.23.Hj; 61.80.Cb; 75.50.Ss; 75.60.Ej; A1. Crystal structure; A1. Growth rate; A3. Electrodeposition; B1. Nanowires; B2. Magnetic materials; B2. Hysteresis; B2. Structure;
Controllable growth of ZnO nanowires with different aspect ratios and microstructures and their photoluminescence and photosensitive properties
Keywords: B1 Nanowires; 78.55.Hx; 81.05.Hd; 81.07.Vb; 81.10.Dn; 81.16.BeA1. Characterization; A1. Nanostructures; A2. Hydrothermal crystal growth; B1. Nanowires; B2. Semiconducting II–VI materials
Properties and characterization of Cu3SbS3 nanowires synthesized by solvothermal route
Keywords: B1 Nanowires; 61.46.Hk; 78.67.Bf; 81.07.VbA1. Single-crystalline; A2. Solvothermal route; B1. Cu3SbS3; B1. Nanowires
Single-crystalline SmB6 nanowires
Keywords: B1 Nanowires; 61.46.+w; 79.70.+q; B1. Nanostructures; B1. Nanowires; B1. RB6; B1. SmB6;
Luminescence of GaAs/AlGaAs core–shell nanowires grown by MOVPE using tertiarybutylarsine
Keywords: B1 Nanowires; 81.15.Gh; 81.05.Ea; 81.07.−b; 81.07.Vb; 78.55.Cr; 78.60.HkA1. Luminescence; A1. Nanostructures; A2. Self-assembly; A3. Metalorganic vapor phase epitaxy; B1. Nanowires; B2. Semiconducting gallium arsenide
Selective-area growth of GaAs and InAs nanowires—homo- and heteroepitaxy using SiNxSiNx templates
Keywords: B1 Nanowires; 81.07.−b; 81.05.Ea; 62.23.Hj; 81.15.KkA1. Nanostructures; A2. Selective-area growth; A3. Metalorganic vapor phase epitaxy; B1. Nanowires
Au-assisted growth of GaAs nanowires by gas source molecular beam epitaxy: Tapering, sidewall faceting and crystal structure
Keywords: B1 Nanowires; 61.46.Hk; 61.72.Dd; 61.72.Nn; 61.82.Fk; 61.82.Rx; 68.37.Hk; 68.37.Lp; 68.55.Jk; 68.70.+w; 81.05.Ea; 81.07.−b; 81.07.Bc; 81.10.Bk; 81.15.Hi; 81.16.DnA1. Nanostructures; A3. Molecular beam epitaxy; B1. Nanowires; B2. Semiconducting gallium arsenide; B2. Sem
Controllable growth of electrodeposited single-crystal nanowire arrays: The examples of metal Ni and semiconductor ZnS
Keywords: B1 Nanowires; 81.07.−b; 81.15.Pq; 81.05.Dz; 75.50.CcA2. Electrodeposition; A2. Single-crystal growth; B1. Nanowires; B2. Magnetic materials; B2. Semiconductors II–VI materials
A simple method to synthesize single-crystalline β-wollastonite nanowires
Keywords: B1 Nanowires; A1. Single-crystalline; A2. Hydrothermal; B1. Nanowires; B2. β-wollastonite
Self-catalyst growth of EuB6 nanowires and nanotubes
Keywords: B1 Nanowires; D 61.46.+w; 79.70.+qA1. Nanostructure; B1. EuB6; B1. Nanotubes; B1. Nanowires; B1. RB6
Hydrothermal formation and characterization of magnesium hydroxide chloride hydrate nanowires
Keywords: B1 Nanowires; A2. Hydrothermal crystal growth; B1. Magnesium hydroxide chloride hydrate (MHCH); B1. Mg2(OH)3Cl·4H2O; Mg3(OH)5Cl·4H2O; B1. Mg10(OH)18Cl2·5H2O; B1. Nanowires
Study on the microstructure and growth mechanism of electrochemical deposited ZnO nanowires
Keywords: B1 Nanowires; 81.05.Dz; 81.05.Ys; 61.16.BgA1. Transmission electron microscopy; A3. Electrochemical deposition; B1. nanowires; B1. Zinc oxide (ZnO)
Synthesis of single-crystalline CeB6 nanowires
Keywords: B1 Nanowires; 61.46.+wA3. Self-catalysts; B1. Cerium hexaboride; B1. Nanowires
Growth mechanisms of GaAs nanowires by gas source molecular beam epitaxy
Keywords: B1 Nanowires; 68.70.+w; 81.10.Bk; 81.15.Hi; 81.16.Hc; 81.05.EaA1. Nanostructures; A3. Molecular beam epitaxy; B1. Nanomaterials; B1. Nanowires; B2. Semiconducting gallium arsenide
Growth and branching of CuO nanowires by thermal oxidation of copper
Keywords: B1 Nanowires; 81.07.−b, 68.37.Hk, 78.40.−qA1. Bandgap; A1. Nanostructures; A1. Optical absorption; A1. Scanning electron microscopy; A2. Thermal oxidation; B1. CuO; B1. Nanowires; B2. Semiconducting materials
Catalytic growth of α-FeSi2 and silicon nanowires
Keywords: B1 Nanowires; 81.07.Bc; 81.15.Lm; A1. Nanostructures; A2. Vapor-liquid-solid; B1. Nanowires; B2. Silicon compounds;
Formation and phase transformation of selenium nanowire arrays in anodic porous alumina templates
Keywords: B1 Nanowires; 81.16.âc; 61.46.+w; 61.72.Ff; 68.37.âd; A1. Transmission electron microscopy nanostructures; A2. Growth from solutions; B1. Nanowires;
Thermal evaporation growth and the luminescence property of TiO2 nanowires
Keywords: B1 Nanowires; A1. Luminescence; A1. Thermal evaporation; A3. Crystal growth; B1. Nanowires;
Synthesis and photoluminescence of gallium oxide ultra-long nanowires and thin nanosheets
Keywords: B1 Nanowires; 81.07.âb; 81.10.Bk; 68.65.âk; A1. Optical absorption; A1. Photoluminescence; B1. β-Ga2O3; B1. Nanosheets; B1. Nanowires;
Light emission from as-prepared and oxidized Si nanowires with diameters of 5-15Â nm
Keywords: B1 Nanowires; 61.82.Rx; 78.67.ân; 81.07.Bc; 81.15.Lm; A1. Nanostructures; A3. Vapor-liquid-solid; B1. Nanowires; B2. Semiconducting silicon;