Preparation and growth mechanism of β-SiC nanowires by using a simplified thermal evaporation method

• We prepared β-SiC nanowires by a simplified CVD method without using catalyst and flowing gases.
• The synthesis technique can be easily controlled and utilized.
• The growth mechanism for the SiC nanowires is proposed.
• This study can be helpful in designing and preparing SiC related nanostructures.

β-SiC nanowires were synthesized by using an improved simple and low-cost thermal evaporation process at 1500 °C, without argon protect and catalyst assistant. The process simplifies the chemical vapor deposition method, which makes it easier to operate and industrialize. X-ray diffraction, Field emission scanning electron microscopy, high-resolution transmission electron microscopy and energy dispersive spectrum were employed to characterize the as-synthesized products. The β-SiC nanowires are about 50–100 nm in diameter, up to several micrometers long and usually grow along [111] direction with a thin oxide shell. A vapor–solid growth mechanism of the nanowires is proposed.