کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1795705 1023727 2008 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Au-assisted growth of GaAs nanowires by gas source molecular beam epitaxy: Tapering, sidewall faceting and crystal structure
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Au-assisted growth of GaAs nanowires by gas source molecular beam epitaxy: Tapering, sidewall faceting and crystal structure
چکیده انگلیسی

GaAs nanowires grown by gas source molecular beam epitaxy for 3, 10, 30, and 40 min durations were studied by both scanning and transmission electron microscopy, providing a description of the time evolution of the nanowire morphology and structure. Tapered, “pencil-shaped” wires were observed in which a transformation of the sidewall orientation occurs from {1¯ 1 0 0} facets at the tip to {2¯ 1 1 0} facets at the base, providing evidence for a layer-by-layer radial growth model. The crystal structure of the nanowires, as well as the nature and frequency of stacking faults, was investigated. Local pseudo-periodicity of defects was observed in the vicinity of the wire base, while defect density decreased as the growth progressed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 2, 15 January 2008, Pages 356–363
نویسندگان
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