کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795705 | 1023727 | 2008 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Au-assisted growth of GaAs nanowires by gas source molecular beam epitaxy: Tapering, sidewall faceting and crystal structure
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کلمات کلیدی
68.55.Jk61.82.Rx61.82.Fk61.72.Dd61.72.Nn81.07.Bc81.10.Bk81.15.Hi81.05.Ea61.46.Hk - 61.46.HK68.37.Lp - 68.37 لیتر68.37.Hk - 68.37.HK68.70.+w - 68.70 + w81.07.?b - 81.07.بA3. Molecular Beam Epitaxy - A3 اپیتاکسی پرتوهای مولکولیB1. Nanowires - B1 NanowiresB2. Semiconducting gallium arsenide - B2 آرسنید گالیوم نیمه هادی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
GaAs nanowires grown by gas source molecular beam epitaxy for 3, 10, 30, and 40 min durations were studied by both scanning and transmission electron microscopy, providing a description of the time evolution of the nanowire morphology and structure. Tapered, “pencil-shaped” wires were observed in which a transformation of the sidewall orientation occurs from {1¯ 1 0 0} facets at the tip to {2¯ 1 1 0} facets at the base, providing evidence for a layer-by-layer radial growth model. The crystal structure of the nanowires, as well as the nature and frequency of stacking faults, was investigated. Local pseudo-periodicity of defects was observed in the vicinity of the wire base, while defect density decreased as the growth progressed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 2, 15 January 2008, Pages 356–363
Journal: Journal of Crystal Growth - Volume 310, Issue 2, 15 January 2008, Pages 356–363
نویسندگان
M.C. Plante, R.R. LaPierre,