Keywords: جداسازی دافنت; Al doping; Surface morphology; Dopant segregation; Optical properties;
مقالات ISI جداسازی دافنت (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Concentric dopant segregation in CVD-grown N-doped graphene single crystals
Keywords: جداسازی دافنت; Chemical vapor deposition; Nitrogen-doped graphene; Monolayer; Single crystal; Dopant segregation; Raman spectroscopy;
Metallic Schottky barrier source/drain nanowire transistors using low-temperature microwave annealed nickel, ytterbium, and titanium silicidation
Keywords: جداسازی دافنت; Schottky barrier; Microwave annealing; Nanowire transistors; Metal silicidation; Dopant segregation;
Segregation of Ge in B and Ge codoped Czochralski-Si crystal growth
Keywords: جداسازی دافنت; Czochralski-Silicon; B and Ge codoping; Dopant segregation;
Variation of Schottky barrier height induced by dopant segregation monitored by contact resistivity measurements
Keywords: جداسازی دافنت; Contact resistivity; Dopant segregation; PtSi; Silicide; Schottky barrier height
First-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO2
Keywords: جداسازی دافنت; B dopants; B segregation; Si/SiO2 interface; Dopant segregation; Metal-oxide-semiconductor field-effect-transistor
Space charge depletion in grain boundaries of BaZrO3 proton conductors
Keywords: جداسازی دافنت; Perovskites; Space charge model; Dopant segregation; Nonlinear electrical properties; Intermediate temperature fuel cell;
20 nm Gate length Schottky MOSFETs with ultra-thin NiSi/epitaxial NiSi2 source/drain
Keywords: جداسازی دافنت; Schottky-MOSFET; High-k; Scaling; NiSi; Epitaxial NiSi2; Short channel effects; Silicide source/drain; Implantation into silicide; Dopant segregation
Computational study of dopant segregated nanoscale Schottky barrier MOSFETs for steep slope, low SD-resistance and high on-current gate-modulated resonant tunneling FETs
Keywords: جداسازی دافنت; Quantum effect semiconductor devices; Dopant segregation; Si Schottky barrier MOSFET; NEGF simulations; Resonant tunneling;
Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI
Keywords: جداسازی دافنت; Schottky barrier MOSFET; Metal source/drain; NiSi; Silicidation; Dopant segregation; Source/drain resistance
Small-signal analysis of high-performance p- and n-type SOI SB-MOSFETs with dopant segregation
Keywords: جداسازی دافنت; Schottky barrier; MOSFET; Metal source/drain; NiSi; Silicidation; Dopant segregation; Radio frequency (RF); Scattering parameters; Small-signal analysis
X-ray photoelectron spectroscopy study of NiSi formation on shallow junctions
Keywords: جداسازی دافنت; 85.40.Ls; 82.80.Pv; 79.20.Rf; 68.35.Dv; NiSi; XPS; Dopant segregation; Preferred sputtering;
Mixed dopant effect in SrZrO3-based proton conductor
Keywords: جداسازی دافنت; Proton conductor; Infrared spectroscopy; Dopant segregation; Proton dissolution environment
Schottky-barrier height tuning of NiGe/n-Ge contacts using As and P segregation
Keywords: جداسازی دافنت; Schottky-barrier height; Dopant segregation; As; P; Germanide; NiGe
Ionic and electronic conduction in nanostructured solids: Concepts and concerns, consensus and controversies
Keywords: جداسازی دافنت; Boundaries; Space charge theory; Impedance; Percolation; Dopant segregation