Small-signal analysis of high-performance p- and n-type SOI SB-MOSFETs with dopant segregation

In this paper, we present fully-depleted Schottky barrier MOSFETs with dopant-segregated NiSi source and drain junctions. Schottky barrier MOSFETs with a channel length of 80 nm show high on-currents of 900 μA/μm for n-type devices with As segregation at Vgs − Vt = 3 V and Vds = 1.2 V and 427 μA/μm for p-type devices with B segregation at Vgs − Vt = −2.8 V and Vds = −1.2 V. A detailed high-frequency characterization proves the high-performance of the devices with cut-off frequencies fT of 117 GHz for n-type and 63 GHz for p-type Schottky barrier MOSFETs and clearly elucidates the effects of extrinsic and intrinsic device parameters as a function of the gate length.