کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1810684 | 1025567 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
First-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO2
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We investigate the stability of boron dopants near the interface between crystalline Si and amorphous SiO2 through first-principles density functional calculations. An interstitial B is found to be more stable in amorphous SiO2 than in Si, so that B dopants tend to segregate to the interface. When defects exist in amorphous SiO2, the stability of B is greatly enhanced, especially around Si floating bond defects, while it is not significantly affected near Si–Si dimers, which are formed by O-vacancy defects.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 407, Issue 15, 1 August 2012, Pages 2989–2992
Journal: Physica B: Condensed Matter - Volume 407, Issue 15, 1 August 2012, Pages 2989–2992
نویسندگان
Young Jun Oh, Hyeon-Kyun Noh, K.J. Chang,