Keywords: هندسی گالیم آرسنید; AE; Acoustic emission; AHP; Analytic hierarchy process; CCD; Charge coupled device; CIGS; Copper-indium-gallium-selenide; DLIT; Dark lock-in thermography; EBIC; Electron beam induced current; EBSD; Electron backscatter diffraction; EDX; Energy-dispersive
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Influences of surface treatment on In0.53Ga0.47As epitaxial layer grown on silicon substrate using trimethylaluminum
Keywords: هندسی گالیم آرسنید; Indium gallium arsenide; Epitaxial layer; Silicon; High-k; Dielectric constant; Atomic layer deposition; Trimethylaluminum; Capacitance density;
Analysis of chemical warfare agents by portable Raman spectrometer with both 785Â nm and 1064Â nm excitation
Keywords: هندسی گالیم آرسنید; CWAs; chemical-warfare agents; GB; sarin; MS; mass spectrometer; FT-IR; Fourier-transform infrared spectroscopy; Vis; visible; NIR; near infrared; CCD; charged-coupled devices; InGaAs; indium gallium arsenide; HN3; nitrogen mustard 3; DM; adamsite; HD; su
Photovoltaic -Thermal systems (PVT): Technology review and future trends
Keywords: هندسی گالیم آرسنید; AM; Air Mass; ANN; Artificial Neural Network; a-Si; Amorphous Silicon; BIPV; Building Integrated Photovoltaics; BIPVT; Building Integrated PVT; CdTe; Cadmium Telluride; CPV; Concentrated Photo Voltaic systems; CPVT; Concentrated type PVT; C-Si; crystallin
Performance analysis of InGaAs/GaAsP heterojunction double gate tunnel field effect transistor
Keywords: هندسی گالیم آرسنید; Indium gallium arsenide; Cut-off frequency; Gain bandwidth product; Heterojunction tunnel field effect transistor; Double gate;
Early tumor detection afforded by in vivo imaging of near-infrared II fluorescence
Keywords: هندسی گالیم آرسنید; Lanthanide nanoparticles; Optical imaging; Ovarian cancer; Tumor targeting; DiR; 1,1'-dioctadecyl-3,3,3â²,3'-tetramethylindotricarbocyanine iodide; DiR-Er,Tm/PEO-PCL; DiR-encapsulated PEO5k-PCL16k-coated NaYF4:Yb,Er,Tm-based LNPs; DiR-Er/PEO-PCL; DiR-enc
Modification of metal–InGaAs Schottky barrier behaviour by atomic layer deposition of ultra-thin Al2O3 interlayers
Keywords: هندسی گالیم آرسنید; High-k dielectric; Sulphur passivation; Indium gallium arsenide; Current–voltage measurement; Schottky barrier height; Interface formation; Atomic layer deposition
Effect on Al:MO2/In0.53Ga0.47As interface (M = Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition
Keywords: هندسی گالیم آرسنید; Atomic layer deposition; Trimethylaluminum; Indium gallium arsenide; Zirconium dioxide; Time-of-flight secondary ion mass spectrometry; X-ray photoelectron spectroscopy
In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric
Keywords: هندسی گالیم آرسنید; Contact; Gate dielectric; Indium gallium arsenide; Multiple-gate transistors
Electrical properties of polycrystalline GaInAs thin films
Keywords: هندسی گالیم آرسنید; Polycrystalline semiconductor; Indium gallium arsenide; III–V compound semiconductor alloys; Molecular beam epitaxy; Hall-effect measurements; Grain-boundary scattering
Structural and electronic properties of group III Rich In0.53Ga0.47As(001)
Keywords: هندسی گالیم آرسنید; Density functional calculations; Scanning tunneling microscopy; Scanning tunneling spectroscopies; Semiconducting surfaces; Surface relaxation and reconstruction; Indium gallium arsenide; Bader charge;
Low power, GHz class ADC for broadband applications
Keywords: هندسی گالیم آرسنید; 81.05.Ea; 84.30.−r; 84.40.Lj; 85.30.De; 85.40.BhHeterojunction bipolar transistor; Molecular beam epitaxy; Indium gallium arsenide; Indium phosphide; Gallium phosphide; Complementary-metal-oxide-semiconductor; Silicon germanium; Analogue to digital conver
Electronic states at misfit dislocations in partially relaxed InGaAs/GaAs heterostructures
Keywords: هندسی گالیم آرسنید; 71.20.Nr; 71.55.−i; 73.20.Hb; 73.61.EyElectronic states; Dislocations; Deep levels; DLTS; Indium gallium arsenide
Surface reconstructions of InGaAs alloys
Keywords: هندسی گالیم آرسنید; Molecular beam epitaxy; Surface reconstructions; Surface alloys; Indium gallium arsenide; Scanning tunnelling microscopy; Electron diffraction;