کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1815804 1525262 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electronic states at misfit dislocations in partially relaxed InGaAs/GaAs heterostructures
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Electronic states at misfit dislocations in partially relaxed InGaAs/GaAs heterostructures
چکیده انگلیسی

Electronic properties of strain-induced dislocations in partially relaxed InGaAs/GaAs heterostructures with a small lattice mismatch have been studied by means of deep-level transient spectroscopy (DLTS). DLTS investigations carried out with Schottky contacts revealed one deep electron trap, at about EC−0.57 eV. The trap has been attributed to electron states associated with α misfit dislocations lying at the interface between the epilayer and the substrate. Thorough studies including DLTS-line shape, DLTS-line behaviour analysis as well as capture kinetics and deep profile measurements made possible to specify the type of electronic states associated with dislocations. We relate the electron trap to “localized” states at misfit dislocations.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 388, Issues 1–2, 15 January 2007, Pages 195–199
نویسندگان
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