Scalable α-power law based MOSFET model for characterization of ultra deep submicron digital integrated circuit design
Keywords: تضعیف تحرک; Scaling of MOSFET; Velocity overshoot; Mobility degradation; Parasitic resistance; DIBL high performance and low power digital Complementary Metal Oxide Semiconductor (CMOS) circuit design; Enz-Krummenacher-Vittoz (EKV) model; Moderate inversion;