Low-frequency noise in high-k LaLuO3/TiN MOSFETs

Low-frequency noise (LFN) characterization of high-k LaLuO3/TiN nMOS transistors is presented. The experimental results including the noise spectrum and normalized power noise density and mobility are reported. The noise results were successfully modeled to the correlated number and mobility fluctuation noise equation. High-k dielectric devices show lower mobility and roughly one to two orders of magnitude higher low-frequency noise which is comparable to the hafnium based oxide layers. The implementation of higher-k LaLuO3 seems to be a suitable candidate to the trade-off between equivalent oxide thickness scaling and low frequency noise.

► Low-frequency noise characterization of high-k LaLuO3/TiN nMOSFETs is presented.
► Noise spectrum, normalized power noise density and mobility results are reported.
► Results were modeled to the correlated number and mobility fluctuation equation.
► High-k dielectric devices show lower mobility and higher low-frequency noise.
► LaLuO3 seems to be a good candidate to the tradeoff between EOT scaling and LFN.