Plasma assisted molecular beam epitaxy of thin GaN films on Si(111) and SiC/Si(111) substrates: Effect of SiC and polarity issues
Keywords: اپتیکاسیون پرتوهای مولکولی با کمک پلاسما; Gallium nitride; Silicon nitride; Buffer layer; Plasma-assisted molecular beam epitaxy; Raman spectroscopy; Silicon;