P-i-n InGaN homojunctions (10-40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600Â nm

- In0.1-0.4GaN homojunctions fabricated by plasma-assisted molecular-beam epitaxy.
- Mg in InGaN does not perturb In incorporation and reduces stacking fault density.
- p-In0.3Ga0.7N layers with a hole concentration of 3.2×1018 cm-3 are demonstrated.
- p-GaN terminated devices show reduced EQE due to polarization potential barriers.
- Pin InGaN devices present a broad EQE of 14±2% extended to 600 nm.

We report the influence of the In mole fraction on the material and electrical characteristics of p-i-n InxGa1−xN homojunctions (x=0.10-0.40) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire substrates. Junctions terminated with p-InGaN present improved carrier extraction efficiency in comparison with devices capped with p-GaN, due to the deleterious effect of polarization discontinuities on the device performance. We demonstrate that the presence of Mg does not perturb the In incorporation in InGaN, and it leads to a significant reduction of the stacking fault density. p-In0.3Ga0.7N layers with a hole concentration of 3.2×1018 cm−3 are demonstrated. InGaN homojunction devices show a peak EQE=14±2% in the blue-to-orange spectral region, and an extended cutoff to 600 nm.